Discrete Semiconductor Products
STN4NF20L
ActiveSTMicroelectronics
N-CHANNEL 200 V, 1.1 OHM TYP., 1 A STRIPFET(TM) II POWER MOSFET IN SOT-223 PACKAGE
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Discrete Semiconductor Products
STN4NF20L
ActiveSTMicroelectronics
N-CHANNEL 200 V, 1.1 OHM TYP., 1 A STRIPFET(TM) II POWER MOSFET IN SOT-223 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STN4NF20L |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 150 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 3.3 W |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm |
| Supplier Device Package | SOT-223 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STN4NF20L Series
This N-channel 200 V realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters.
Documents
Technical documentation and resources