Discrete Semiconductor Products

HGT1S2N120CN

Obsolete

IGBT 1200V 13A 104W I2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT 1200V 13A 104W I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	HGT1S2N120CN

Current - Collector Pulsed (Icm)	20 A
Gate Charge	30 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power - Max [Max]	104 W
Supplier Device Package	TO-262
Switching Energy	96 µJ, 355 µJ
Td (on/off) @ 25°C	205 ns
Td (on/off) @ 25°C	25 ns
Test Condition	2.6 A, 15 V, 960 V, 51 Ohm
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Gate Charge	Supplier Device Package	Test Condition	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy	Mounting Type	IGBT Type
ON Semiconductor HGT1S2N120CN	30 nC	TO-262	2.6 A 15 V 51 Ohm 960 V	20 A	1200 V	205 ns	25 ns	2.4 V	104 W	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	150 °C	96 µJ 355 µJ	Through Hole	NPT

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 1200 V 13 A 104 W Through Hole TO-262

Technical documentation and resources