HGT1S2N120 Series
Manufacturer: ON Semiconductor
IGBT 1200V 13A 104W I2PAK
| Part | Gate Charge | Supplier Device Package | Test Condition | Current - Collector Pulsed (Icm) | Voltage - Collector Emitter Breakdown (Max) [Max] | Td (on/off) @ 25°C | Td (on/off) @ 25°C | Vce(on) (Max) @ Vge, Ic | Power - Max [Max] | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Switching Energy | Mounting Type | IGBT Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 30 nC | TO-262 | 2.6 A 15 V 51 Ohm 960 V | 20 A | 1200 V | 205 ns | 25 ns | 2.4 V | 104 W | I2PAK TO-262-3 Long Leads TO-262AA | -55 °C | 150 °C | 96 µJ 355 µJ | Through Hole | NPT |