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TO-252 DPAK
Discrete Semiconductor Products

FDD9509L-F085

Obsolete
ON Semiconductor

P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, -40 V, -100 A, 4.4 MΩ

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TO-252 DPAK
Discrete Semiconductor Products

FDD9509L-F085

Obsolete
ON Semiconductor

P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, -40 V, -100 A, 4.4 MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD9509L-F085
Current - Continuous Drain (Id) @ 25°C90 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]75 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds3350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)150 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs7.5 mOhm
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FDD9509L-F085 Series

P-Channel POWERTRENCH®MOSFET, -40 V, -100 A, 4.4 mΩ