FDD9509L-F085 Series

P-Channel POWERTRENCH® MOSFET, -40 V, -100 A, 4.4 mΩ

Catalog

P-Channel POWERTRENCH® MOSFET, -40 V, -100 A, 4.4 mΩ

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Grade	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Package / Case	Vgs (Max)
ON Semiconductor FDD9509L-F085	3 V	75 nC	MOSFET (Metal Oxide)	3350 pF	P-Channel	Automotive	40 V	90 A	4.5 V 10 V	Surface Mount	-55 °C	175 ░C	AEC-Q101	7.5 mOhm	150 W	TO-252 (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	16 V

P-Channel POWERTRENCH® MOSFET, -40 V, -100 A, 4.4 mΩ

• Typical RDS(on)= 6.0 mΩ at VGS= -10V, ID= -70 A

• Typical Qg(tot)= 50 nC at VGS= -10V, ID= -70 A

• UIS Capability

• Qualified to AEC Q101

• RoHS Compliant

P-Channel POWERTRENCH®MOSFET, -40 V, -100 A, 4.4 mΩ