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Technical Specifications
Parameters and characteristics for this part
| Specification | FQPF2N50 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.3 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 20 W |
| Rds On (Max) @ Id, Vgs | 5.3 Ohm |
| Supplier Device Package | TO-220F-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
FQPF2N80YDTU Series
Power MOSFET, N-Channel, QFET<sup>®</sup>, 600 V, 2 A, 4.7 Ω, TO-220F
| Part | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Technology | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Package / Case | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 1.3 A | TO-220F-3 | 500 V | 8 nC | MOSFET (Metal Oxide) | 5 V | 20 W | TO-220-3 Full Pack | Through Hole | 30 V | 230 pF | N-Channel | -55 °C | 150 °C | 5.3 Ohm | 10 V | |||
ON Semiconductor | 2 A | TO-220F-3 | 600 V | MOSFET (Metal Oxide) | 4 V | 23 W | TO-220-3 Full Pack | Through Hole | 30 V | 235 pF | N-Channel | -55 °C | 150 °C | 4.7 Ohm | 10 V | 12 nC | |||
 ON Semiconductor | 1.6 A | TO-220F-3 | 600 V | MOSFET (Metal Oxide) | 5 V | TO-220-3 Full Pack | Through Hole | 30 V | N-Channel | -55 °C | 150 °C | 4.7 Ohm | 10 V | 11 nC | 28 W | 350 pF | |||
ON Semiconductor | 2 A | TO-220F-3 | 600 V | MOSFET (Metal Oxide) | 4 V | 23 W | TO-220-3 Full Pack | Through Hole | 30 V | 235 pF | N-Channel | -55 °C | 150 °C | 4.7 Ohm | 10 V | 12 nC | |||
ON Semiconductor | 1.34 A | TO-220F-3 | 400 V | MOSFET (Metal Oxide) | 5 V | TO-220-3 Full Pack | Through Hole | 30 V | P-Channel | -55 °C | 150 °C | 6.5 Ohm | 10 V | 13 nC | 28 W | 350 pF | |||
ON Semiconductor | 14 A | TO-220F-3 | 250 V | MOSFET (Metal Oxide) | 5 V | TO-220-3 Full Pack | Through Hole | 30 V | 2450 pF | N-Channel | -55 °C | 150 °C | 110 mOhm | 10 V | 65 nC | 55 W | |||
ON Semiconductor | 1.5 A | TO-220F-3 | 800 V | MOSFET (Metal Oxide) | 5 V | TO-220-3 Full Pack Formed Leads | Through Hole | 30 V | 550 pF | N-Channel | -55 °C | 150 °C | 6.3 Ohm | 10 V | 35 W | ||||
ON Semiconductor | 1.5 A | TO-220F-3 | 800 V | MOSFET (Metal Oxide) | 5 V | TO-220-3 Full Pack | Through Hole | 30 V | 550 pF | N-Channel | -55 °C | 150 °C | 6.3 Ohm | 10 V | 35 W | ||||
ON Semiconductor | 1.3 A | TO-220F-3 | 500 V | 8 nC | MOSFET (Metal Oxide) | 5 V | 20 W | TO-220-3 Full Pack | Through Hole | 30 V | 230 pF | N-Channel | -55 °C | 150 °C | 5.3 Ohm | 10 V | |||
ON Semiconductor | 1.5 A | TO-220F-3 | 800 V | MOSFET (Metal Oxide) | 5 V | TO-220-3 Full Pack Formed Leads | Through Hole | 30 V | 550 pF | N-Channel | -55 °C | 150 °C | 6.3 Ohm | 10 V | 35 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 807 | $ 0.37 | |
| 807 | $ 0.37 | |||
Description
General part information
FQPF2N80YDTU Series
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Documents
Technical documentation and resources