Specification	FQPF2N60C

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	235 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	23 W
Rds On (Max) @ Id, Vgs	4.7 Ohm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQPF2N80YDTU Series

Power MOSFET, N-Channel, QFET®, 600 V, 2 A, 4.7 Ω, TO-220F

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FQPF2N50	1.3 A	TO-220F-3	500 V	8 nC	MOSFET (Metal Oxide)	5 V	20 W	TO-220-3 Full Pack	Through Hole	30 V	230 pF	N-Channel	-55 °C	150 °C	5.3 Ohm	10 V
ON Semiconductor FQPF2N60C	2 A	TO-220F-3	600 V		MOSFET (Metal Oxide)	4 V	23 W	TO-220-3 Full Pack	Through Hole	30 V	235 pF	N-Channel	-55 °C	150 °C	4.7 Ohm	10 V	12 nC
ON Semiconductor FQPF2N60	1.6 A	TO-220F-3	600 V		MOSFET (Metal Oxide)	5 V		TO-220-3 Full Pack	Through Hole	30 V		N-Channel	-55 °C	150 °C	4.7 Ohm	10 V	11 nC	28 W	350 pF
ON Semiconductor FQPF2N60C	2 A	TO-220F-3	600 V		MOSFET (Metal Oxide)	4 V	23 W	TO-220-3 Full Pack	Through Hole	30 V	235 pF	N-Channel	-55 °C	150 °C	4.7 Ohm	10 V	12 nC
ON Semiconductor FQPF2P40	1.34 A	TO-220F-3	400 V		MOSFET (Metal Oxide)	5 V		TO-220-3 Full Pack	Through Hole	30 V		P-Channel	-55 °C	150 °C	6.5 Ohm	10 V	13 nC	28 W	350 pF
ON Semiconductor FQPF27N25T	14 A	TO-220F-3	250 V		MOSFET (Metal Oxide)	5 V		TO-220-3 Full Pack	Through Hole	30 V	2450 pF	N-Channel	-55 °C	150 °C	110 mOhm	10 V	65 nC	55 W
ON Semiconductor FQPF2N80YDTU	1.5 A	TO-220F-3	800 V		MOSFET (Metal Oxide)	5 V		TO-220-3 Full Pack Formed Leads	Through Hole	30 V	550 pF	N-Channel	-55 °C	150 °C	6.3 Ohm	10 V		35 W
ON Semiconductor FQPF2N80	1.5 A	TO-220F-3	800 V		MOSFET (Metal Oxide)	5 V		TO-220-3 Full Pack	Through Hole	30 V	550 pF	N-Channel	-55 °C	150 °C	6.3 Ohm	10 V		35 W
ON Semiconductor FQPF2N50	1.3 A	TO-220F-3	500 V	8 nC	MOSFET (Metal Oxide)	5 V	20 W	TO-220-3 Full Pack	Through Hole	30 V	230 pF	N-Channel	-55 °C	150 °C	5.3 Ohm	10 V
ON Semiconductor FQPF2N80YDTU	1.5 A	TO-220F-3	800 V		MOSFET (Metal Oxide)	5 V		TO-220-3 Full Pack Formed Leads	Through Hole	30 V	550 pF	N-Channel	-55 °C	150 °C	6.3 Ohm	10 V		35 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	501	$ 0.60
		501	$ 0.60

Description

General part information

FQPF2N80YDTU Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.