SI8809EDB-T2-E1

Obsolete

MOSFET P-CH 20V 1.9A MICROFOOT

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 1.9A MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8809EDB-T2-E1

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-XFBGA
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs [Max]	90 mOhm
Supplier Device Package	4-Microfoot
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SI8809EDB-T2-E1	900 mV	P-Channel	20 V	4-XFBGA	8 V	Surface Mount	90 mOhm	4-Microfoot	-55 °C	150 °C	MOSFET (Metal Oxide)	15 nC	1.8 V 4.5 V	500 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 1.94 (Ta) 500mW (Ta) Surface Mount 4-Microfoot

Technical documentation and resources