SI8809 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 20V 1.9A MICROFOOT
| Part | Vgs(th) (Max) @ Id | FET Type | Drain to Source Voltage (Vdss) | Package / Case | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 900 mV | P-Channel | 20 V | 4-XFBGA | 8 V | Surface Mount | 90 mOhm | 4-Microfoot | -55 °C | 150 °C | MOSFET (Metal Oxide) | 15 nC | 1.8 V 4.5 V | 500 mW |