Specification	FDZ661PZ

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.8 nC
Input Capacitance (Ciss) (Max) @ Vds	555 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	WLCSP, 4-XFBGA
Power Dissipation (Max)	1.3 W
Supplier Device Package	4-WLCSP (0.8x0.8)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.2 V

FDZ661PZ Series

P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20V, -2.6A, 140mΩ

Part	Technology	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDZ661PZ	MOSFET (Metal Oxide)	P-Channel	1.2 V	Surface Mount	20 V	2.6 A	1.5 V 4.5 V	1.3 W	4-WLCSP (0.8x0.8)	8 V	8.8 nC	555 pF	4-XFBGA WLCSP	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	952	$ 0.32

Description

General part information

FDZ661PZ Series

Designed on an advanced 1.5 V PowerTrench®process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ661PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile (0.4 mm) and small (0.8x0.8 mm2) packaging, low gate charge, and low rDS(on).