FDZ661PZ Series

P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20V, -2.6A, 140mΩ

Catalog

P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20V, -2.6A, 140mΩ

Part	Technology	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDZ661PZ	MOSFET (Metal Oxide)	P-Channel	1.2 V	Surface Mount	20 V	2.6 A	1.5 V 4.5 V	1.3 W	4-WLCSP (0.8x0.8)	8 V	8.8 nC	555 pF	4-XFBGA WLCSP	-55 °C	150 °C

Catalog

P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20V, -2.6A, 140mΩ

Key Features

• Max rDS(on)= 140 mΩ at VGS= -4.5 V, ID= -2 A

• Max rDS(on)= 182 mΩ at VGS= -2.5 V, ID= -1.5 A

• Max rDS(on)= 231 mΩ at VGS= -1.8 V, ID= -1 A

• Max rDS(on)= 315 mΩ at VGS= -1.5 V, ID= -1 A

• Occupies only 0.64 mm2of PCB area. Less than 16% of the area of 2 x 2 BGA

• Ultra-thin package: less than 0.4 mm height when mounted to PCB

• HBM ESD protection level > 2 kV (Note 3)

• RoHS Compliant

Description

Designed on an advanced 1.5 V PowerTrench®process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ661PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile (0.4 mm) and small (0.8x0.8 mm2) packaging, low gate charge, and low rDS(on).