Discrete Semiconductor Products

PMN230ENEX

Obsolete

MOSFET N-CH 60V 1.6A 6TSOP

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 1.6A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PMN230ENEX

Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5 nC
Input Capacitance (Ciss) (Max) @ Vds	177 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-74, SOT-457
Power Dissipation (Max)	475 mW, 3.9 W
Rds On (Max) @ Id, Vgs [Max]	222 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	FET Type	Supplier Device Package	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP PMN230ENEX	N-Channel	6-TSOP	SC-74 SOT-457	Surface Mount	1.6 A	60 V	20 V	222 mOhm	150 °C	MOSFET (Metal Oxide)	2.7 V	3.9 W 475 mW	177 pF	4.5 V 10 V	5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 1.6A (Ta) 475mW (Ta), 3.9W (Tc) Surface Mount 6-TSOP

Technical documentation and resources