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SOT457
Discrete Semiconductor Products

PMN230ENEAX

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Nexperia USA Inc.

60 V, N-CHANNEL TRENCH MOSFET

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SOT457
Discrete Semiconductor Products

PMN230ENEAX

Active
Nexperia USA Inc.

60 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMN230ENEAX
Current - Continuous Drain (Id) @ 25°C1.8 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds110 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-457, SC-74
Power Dissipation (Max)5.4 W
Power Dissipation (Max)625 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs222 mOhm
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.45
10$ 0.31
100$ 0.16
500$ 0.13
1000$ 0.10
Digi-Reel® 1$ 0.45
10$ 0.31
100$ 0.16
500$ 0.13
1000$ 0.10
N/A 5886$ 0.48
Tape & Reel (TR) 3000$ 0.06
6000$ 0.06
9000$ 0.05

Description

General part information

PMN230 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.