Discrete Semiconductor Products

APT14F100B

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MOSFET N-CH 1000V 14A TO247

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Discrete Semiconductor Products

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MOSFET N-CH 1000V 14A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	APT14F100B

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	3965 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	980 mOhm
Supplier Device Package	TO-247 [B]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case
Microchip Technology APT14F100B	TO-247 [B]	-55 °C	150 °C	500 W	N-Channel	Through Hole	980 mOhm	MOSFET (Metal Oxide)	3965 pF	120 nC	14 A	30 V	10 V	1000 V	TO-247-3
Microchip Technology APT14F100S	D3PAK	-55 °C	150 °C	500 W	N-Channel	Surface Mount	980 mOhm	MOSFET (Metal Oxide)	3965 pF	120 nC	14 A	30 V	10 V	1000 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA

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General part information

N-Channel 1000 V 14A (Tc) 500W (Tc) Through Hole TO-247 [B]

Technical documentation and resources