Specification	KSB546YTU

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	5 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	25 W
Supplier Device Package	TO-220-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	150 V

KSB546 Series

PNP Epitaxial Silicon Transistor

Part	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Package / Case	Mounting Type	Operating Temperature	Frequency - Transition	Transistor Type	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor KSB546YTU	2 A	1 V	120	25 W	50 µA	TO-220-3	TO-220-3	Through Hole	150 °C	5 MHz	PNP	150 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources