Catalog
PNP Epitaxial Silicon Transistor
Key Features
• Collector-Base Voltage: VCBO= -200 V
• Collector Current: IC= -2 A
• Collector Dissipation: PC= 2 5W (TC=25°C)
• Complement to KSD401TV
• TV Vertical Deflection Output
PNP Epitaxial Silicon Transistor
PNP Epitaxial Silicon Transistor
| Part | Current - Collector (Ic) (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Package / Case | Mounting Type | Operating Temperature | Frequency - Transition | Transistor Type | Voltage - Collector Emitter Breakdown (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 2 A | 1 V | 120 | 25 W | 50 µA | TO-220-3 | TO-220-3 | Through Hole | 150 °C | 5 MHz | PNP | 150 V |