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SOT666
Discrete Semiconductor Products

NX1029XH

NRND
Nexperia USA Inc.

MOSFET N/P-CH 50V 0.33A SOT666

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SOT666
Discrete Semiconductor Products

NX1029XH

NRND
Nexperia USA Inc.

MOSFET N/P-CH 50V 0.33A SOT666

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationNX1029XH
ConfigurationN and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C330 mA, 170 mA
Drain to Source Voltage (Vdss)50 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.6 nC, 0.35 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds36 pF, 50 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-563, SOT-666
Power - Max1.09 W, 330 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs7.5 Ohm, 1.6 Ohm
Supplier Device PackageSOT-666
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.11
Tape & Reel (TR) 4000$ 0.09
8000$ 0.09
12000$ 0.08
20000$ 0.07
28000$ 0.07
40000$ 0.06
100000$ 0.06

Description

General part information

NX1029 Series

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources