Specification	NX1029X,115

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	170 mA, 330 mA
Drain to Source Voltage (Vdss)	60 V, 50 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	0.35 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	36 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-563, SOT-666
Power - Max [Max]	500 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.5 Ohm
Supplier Device Package	SOT-666
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

NX1029 Series

60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET

Part	FET Feature	Qualification	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Grade	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Configuration	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Power - Max	Input Capacitance (Ciss) (Max) @ Vds
Nexperia USA Inc. NX1029X,115	Logic Level Gate	AEC-Q101	7.5 Ohm	500 mW	Surface Mount	50 V 60 V	Automotive	SOT-666	36 pF	MOSFET (Metal Oxide)	2.1 V	150 °C	-55 °C	N and P-Channel	SOT-563 SOT-666	170 mA 330 mA	0.35 nC
Nexperia USA Inc. NX1029XH	Logic Level Gate	AEC-Q101	1.6 Ohm 7.5 Ohm		Surface Mount	50 V	Automotive	SOT-666		MOSFET (Metal Oxide)	2.1 V	150 °C	-55 °C	N and P-Channel Complementary	SOT-563 SOT-666	170 mA 330 mA		0.35 nC 0.6 nC	1.09 W 330 mW	36 pF 50 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.40
		10	$ 0.28
		100	$ 0.14
		500	$ 0.13
		1000	$ 0.10
		2000	$ 0.09
	Digi-Reel®	1	$ 0.40
		10	$ 0.28
		100	$ 0.14
		500	$ 0.13
		1000	$ 0.10
		2000	$ 0.09
	N/A	9	$ 0.53
	Tape & Reel (TR)	4000	$ 0.09
		8000	$ 0.09
		12000	$ 0.08
		28000	$ 0.07
		100000	$ 0.06

Description

General part information

NX1029 Series

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.