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NVTFS5C460NLWFTAG

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ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 40V, 74A, 4.8MΩ

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8-WDFN
Discrete Semiconductor Products

NVTFS5C460NLWFTAG

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 40V, 74A, 4.8MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationNVTFS5C460NLWFTAG
Current - Continuous Drain (Id) @ 25°C [Max]74 A, 19 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]11 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1300 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)3.1 W, 50 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs4.8 mOhm
Supplier Device Package8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

NVTFS5C673NL Series

Power MOSFET 60V, 29A, 11.5 mOhm, Single N-Channel, u8FL, Logic Level.

PartGradeGate Charge (Qg) (Max) @ Vgs [Max]Vgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Rds On (Max) @ Id, VgsDrive Voltage (Max Rds On, Min Rds On)FET TypeOperating Temperature [Min]Operating Temperature [Max]Supplier Device PackageMounting TypePackage / CaseVgs (Max)QualificationTechnologyInput Capacitance (Ciss) (Max) @ Vds [Max]Vgs(th) (Max) @ Id [Max]Power Dissipation (Max)Gate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsRds On (Max) @ Id, Vgs [Max]Current - Continuous Drain (Id) @ 25°C [Max]Gate Charge (Qg) (Max) @ Vgs [x]Current - Continuous Drain (Id) @ 25°CPower Dissipation (Max) [Max]
ONSEMI NVTFS6H888NTAG
ON Semiconductor
Automotive
5.5 nC
2.2 V
41 A
40 V
9 mOhm
4.5 V
10 V
N-Channel
-55 °C
175 ░C
8-WDFN (3.3x3.3)
Surface Mount
8-PowerWDFN
20 V
AEC-Q101
MOSFET (Metal Oxide)
8-WDFN
ON Semiconductor
Automotive
51 A
40 V
7.3 mOhm
4.5 V
10 V
N-Channel
-55 °C
175 ░C
8-WDFN (3.3x3.3)
Surface Mount
8-PowerWDFN
20 V
AEC-Q101
MOSFET (Metal Oxide)
880 pF
2.2 V
38 W
7 nC
8-WDFN
ON Semiconductor
Automotive
2.2 V
26 A
40 V
14 mOhm
4.5 V
10 V
N-Channel
-55 °C
175 ░C
8-WDFN (3.3x3.3)
Surface Mount
8-PowerWDFN
20 V
AEC-Q101
MOSFET (Metal Oxide)
20 W
8 nC
400 pF
ONSEMI NVTFS6H888NTAG
ON Semiconductor
Automotive
7.82 A
20 A
60 V
26.5 mOhm
4.5 V
10 V
N-Channel
-55 °C
175 ░C
8-WDFN (3.3x3.3)
Surface Mount
8-PowerWDFN
20 V
AEC-Q101
MOSFET (Metal Oxide)
2.2 V
3 W
20 W
6 nC
327 pF
8-WDFN
ON Semiconductor
Automotive
35 nC
2 V
107 A
40 V
3.1 mOhm
4.5 V
10 V
N-Channel
-55 °C
175 ░C
8-WDFN (3.3x3.3)
Surface Mount
8-PowerWDFN
20 V
AEC-Q101
MOSFET (Metal Oxide)
68 W
2100 pF
8-WDFN
ON Semiconductor
Automotive
40 V
4.5 V
10 V
N-Channel
-55 °C
175 ░C
8-WDFN (3.3x3.3)
Surface Mount
8-PowerWDFN
20 V
AEC-Q101
MOSFET (Metal Oxide)
2.2 V
3.2 W
21 W
30 nC
1570 pF
6.7 mOhm
8-WDFN
ON Semiconductor
Automotive
11 nC
2 V
40 V
4.8 mOhm
4.5 V
10 V
N-Channel
-55 °C
175 ░C
8-WDFN (3.3x3.3)
Surface Mount
8-PowerWDFN
20 V
AEC-Q101
MOSFET (Metal Oxide)
3.1 W
50 W
1300 pF
19 A
74 A
8-WDFN
ON Semiconductor
Automotive
2 V
16 A
60 V
6.8 mOhm
4.5 V
10 V
N-Channel
-55 °C
175 ░C
8-WDFN (3.3x3.3)
Surface Mount
8-PowerWDFN
20 V
AEC-Q101
MOSFET (Metal Oxide)
3.2 W
63 W
1400 pF
20 nC
70 A
8-WDFN
ON Semiconductor
Automotive
16 nC
2.5 V
37 A
60 V
4.5 V
10 V
N-Channel
-55 °C
175 ░C
8-WDFN (3.3x3.3)
Surface Mount
8-PowerWDFN
20 V
AEC-Q101
MOSFET (Metal Oxide)
3.2 W
57 W
850 pF
20.5 mOhm
ONSEMI NVTFS6H888NTAG
ON Semiconductor
Automotive
85 A
40 V
4 mOhm
4.5 V
10 V
N-Channel
-55 °C
175 ░C
8-WDFN (3.3x3.3)
Surface Mount
8-PowerWDFN
20 V
AEC-Q101
MOSFET (Metal Oxide)
2.2 V
1600 pF
55 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.44
10$ 1.57
100$ 1.07
500$ 0.86
Digi-Reel® 1$ 2.44
10$ 1.57
100$ 1.07
500$ 0.86
Tape & Reel (TR) 1500$ 0.76
3000$ 0.71
NewarkEach 1000$ 0.95
2500$ 0.76
10000$ 0.74
ON SemiconductorN/A 1$ 0.66

Description

General part information

NVTFS5C673NL Series

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.