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8-WDFN
Discrete Semiconductor Products

NVTFS5C670NLTAG

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ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 60V, 70A, 6.8MΩ

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8-WDFN
Discrete Semiconductor Products

NVTFS5C670NLTAG

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 60V, 70A, 6.8MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVTFS5C670NLTAG
Current - Continuous Drain (Id) @ 25°C16 A
Current - Continuous Drain (Id) @ 25°C70 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]20 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1400 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)63 W, 3.2 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs6.8 mOhm
Supplier Device Package8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.11
10$ 1.35
100$ 0.92
500$ 0.73
Digi-Reel® 1$ 2.11
10$ 1.35
100$ 0.92
500$ 0.73
Tape & Reel (TR) 1500$ 0.64
3000$ 0.59
4500$ 0.58
NewarkEach (Supplied on Cut Tape) 1$ 2.10
ON SemiconductorN/A 1$ 0.54

Description

General part information

NVTFS5C673NL Series

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.