Discrete Semiconductor Products
FDPF3860T
ActiveON Semiconductor
MOSFET TRANSISTOR, N CHANNEL, 20 A, 100 V, 0.0291 OHM, 10 V, 2.5 V ROHS COMPLIANT: YES
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Discrete Semiconductor Products
FDPF3860T
ActiveON Semiconductor
MOSFET TRANSISTOR, N CHANNEL, 20 A, 100 V, 0.0291 OHM, 10 V, 2.5 V ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDPF3860T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 35 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Rds On (Max) @ Id, Vgs | 38.2 mOhm |
| Supplier Device Package | TO-220F-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.42 | |
| 50 | $ 1.14 | |||
| 100 | $ 0.90 | |||
| 500 | $ 0.77 | |||
| 1000 | $ 0.62 | |||
| 2000 | $ 0.59 | |||
| 5000 | $ 0.56 | |||
| 10000 | $ 0.53 | |||
| Newark | Each | 1 | $ 2.28 | |
| 10 | $ 1.30 | |||
| 100 | $ 1.20 | |||
| 500 | $ 1.02 | |||
| 1000 | $ 0.95 | |||
| ON Semiconductor | N/A | 1 | $ 0.57 | |
Description
General part information
FDPF3860T Series
This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Documents
Technical documentation and resources