FDPF3860T Series

N-Channel PowerTrench® MOSFET 100V, 20A, 38.2mΩ

Catalog

N-Channel PowerTrench® MOSFET 100V, 20A, 38.2mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id
ON Semiconductor FDPF3860T	-55 °C	150 °C	100 V	N-Channel	20 V	1800 pF	TO-220F-3	38.2 mOhm	TO-220-3 Full Pack	10 V	20 A	MOSFET (Metal Oxide)	35 nC	Through Hole	4.5 V

Catalog

N-Channel PowerTrench® MOSFET 100V, 20A, 38.2mΩ

Key Features

• RDS(on)= 29.1mΩ ( Typ.) @ VGS= 10V, ID= 5.9A

• Fast switching speed

• Low Gate Charge

• High performance trench technology for extremely low RDS(on)

• High power and current handling capability

• RoHS compliant

Description

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.