Discrete Semiconductor Products

BUK762R6-60E,118

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N-CHANNEL TRENCHMOS STANDARD LEVEL FET@EN-US D2PAK 3-PIN

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Discrete Semiconductor Products

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N-CHANNEL TRENCHMOS STANDARD LEVEL FET@EN-US D2PAK 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BUK762R6-60E,118

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	10170 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	324 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Vgs (Max)	Grade	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Qualification	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP BUK762R4-60E,118	357 W	120 A	10 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	20 V	Automotive	D2PAK	2.4 mOhm	158 nC	AEC-Q101	N-Channel	11180 pF
Freescale Semiconductor - NXP BUK762R6-60E,118	324 W	120 A	10 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	20 V	Automotive	D2PAK	2.6 mOhm		AEC-Q101	N-Channel	10170 pF	140 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 120A (Tc) 324W (Tc) Surface Mount D2PAK

Technical documentation and resources