BUK762 Series

Catalog

N-CHANNEL TRENCHMOS STANDARD LEVEL FET@EN-US D2PAK 3-PIN

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Vgs (Max)	Grade	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Qualification	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP BUK762R4-60E,118	357 W	120 A	10 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	20 V	Automotive	D2PAK	2.4 mOhm	158 nC	AEC-Q101	N-Channel	11180 pF
Freescale Semiconductor - NXP BUK762R6-60E,118	324 W	120 A	10 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	20 V	Automotive	D2PAK	2.6 mOhm		AEC-Q101	N-Channel	10170 pF	140 nC