Specification	FDZ1905PZ

Configuration	2 P-Channel
FET Feature	Logic Level Gate
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFBGA, WLCSP
Power - Max [Max]	900 mW
Rds On (Max) @ Id, Vgs	126 mOhm
Supplier Device Package	6-WLCSP (1x1.5)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

FDZ1905PZ Series

Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET -20V, -3A, 123mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power - Max [Max]	Rds On (Max) @ Id, Vgs	FET Feature	Configuration	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Technology
ON Semiconductor FDZ1905PZ	-55 °C	150 °C	6-UFBGA WLCSP	900 mW	126 mOhm	Logic Level Gate	2 P-Channel	6-WLCSP (1x1.5)	Surface Mount	1 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	825	$ 0.36

Description

General part information

FDZ1905PZ Series

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on an advanced 1.5V PowerTrench®process with state of the art ¡°low pitch¡± WL-CSP packaging process, the FDZ1905PZ minimizes both PCB space and rS1S2(on). This advanced WL-CSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rS1S2(on).