SQJ146EP-T1_GE3

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MOSFET N-CH 40V 75A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 40V 75A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ146EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	75 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Grade	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id [Max]	Technology	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SQJ146ELP-T1_GE3	5.8 mOhm	Surface Mount	AEC-Q101	4.5 V 10 V	Automotive	PowerPAK® SO-8	-55 °C	175 ░C	35 nC	1780 pF	40 V	20 V	75 W	74 A	PowerPAK® SO-8	N-Channel	2.2 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SQJ146EP-T1_GE3	7 mOhm	Surface Mount	AEC-Q101	10 V	Automotive	PowerPAK® SO-8	-55 °C	175 ░C	27 nC	1500 pF	40 V	20 V	75 W	75 A	PowerPAK® SO-8	N-Channel		MOSFET (Metal Oxide)	3.5 V

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General part information

N-Channel 40 V 75A (Tc) 75W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources