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TO-247-2
Discrete Semiconductor Products

FFSH10120A

Active
ON Semiconductor

SILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 10 A, 1200 V, D1, TO-247-2L

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DocumentsProduct Change Notice ENDatasheet+2
TO-247-2
Discrete Semiconductor Products

FFSH10120A

Active
ON Semiconductor

SILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 10 A, 1200 V, D1, TO-247-2L

Deep-Dive with AI

DocumentsProduct Change Notice ENDatasheet+2

Technical Specifications

Parameters and characteristics for this part

SpecificationFFSH10120A
Capacitance @ Vr, F612 pF
Current - Average Rectified (Io)17 A
Current - Reverse Leakage @ Vr200 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseTO-247-2
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackageTO-247-2
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If1.75 V

FFSH10120ADN-F155 Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, TO-247-3L

PartMounting TypeOperating Temperature - Junction [Max]Operating Temperature - Junction [Min]Supplier Device PackageTechnologyCurrent - Average Rectified (Io)Reverse Recovery Time (trr)Current - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfPackage / CaseCapacitance @ Vr, FVoltage - DC Reverse (Vr) (Max) [Max]SpeedQualificationGradeDiode ConfigurationCurrent - Average Rectified (Io) (per Diode)
TO-247-2
ON Semiconductor
FFSH10120A
Through Hole
175 ░C
-55 C
TO-247-2
SiC (Silicon Carbide) Schottky
17 A
0 ns
200 µA
1.75 V
TO-247-2
612 pF
1.2 kV
No Recovery Time
TO-247-2-Series
ON Semiconductor
FFSH10120A-F085
Through Hole
175 ░C
-55 C
TO-247-2
SiC (Silicon Carbide) Schottky
17 A
0 ns
200 µA
TO-247-2
612 pF
1.2 kV
No Recovery Time
AEC-Q101
Automotive
TO-247-3
ON Semiconductor
FFSH10120ADN-F155
Through Hole
175 °C
TO-247-3
SiC (Silicon Carbide) Schottky
0 ns
TO-247-3
1.2 kV
No Recovery Time
1 Pair Common Cathode
10 A
TO-247-3
ON Semiconductor
FFSH10120ADN_F155
Through Hole
175 °C
TO-247-3
SiC (Silicon Carbide) Schottky
0 ns
TO-247-3
1.2 kV
No Recovery Time
1 Pair Common Cathode
10 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.95
30$ 3.95
120$ 3.66
510$ 3.66
NewarkEach 250$ 4.10
500$ 3.99
ON SemiconductorN/A 1$ 3.37

Description

General part information

FFSH10120ADN-F155 Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.