FFSH10120ADN-F155 Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, TO-247-3L

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, TO-247-3L

Part	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Qualification	Grade	Diode Configuration	Current - Average Rectified (Io) (per Diode)
ON Semiconductor FFSH10120A	Through Hole	175 ░C	-55 C	TO-247-2	SiC (Silicon Carbide) Schottky	17 A	200 µA	1.75 V	TO-247-2	612 pF	1.2 kV	No Recovery Time
ON Semiconductor FFSH10120A-F085	Through Hole	175 ░C	-55 C	TO-247-2	SiC (Silicon Carbide) Schottky	17 A	200 µA		TO-247-2	612 pF	1.2 kV	No Recovery Time	AEC-Q101	Automotive
ON Semiconductor FFSH10120ADN-F155	Through Hole	175 °C		TO-247-3	SiC (Silicon Carbide) Schottky				TO-247-3		1.2 kV	No Recovery Time			1 Pair Common Cathode	10 A
ON Semiconductor FFSH10120ADN_F155	Through Hole	175 °C		TO-247-3	SiC (Silicon Carbide) Schottky				TO-247-3		1.2 kV	No Recovery Time			1 Pair Common Cathode	10 A

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, TO-247-3L

Key Features

• Max Junction Temperature 175 °C

• AEC-Q101 qualified and PPAP Capable

• No Reverse Recovery / No Forward Recovery

• High Surge Current Capacity

• Ease of Paralleling

• Positive Temperature Coefficient

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.