Littelfuse Power Semi TO-263 7 1S6C image

Discrete Semiconductor Products

IXTA150N15X4-7

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHULTRJNCTN X3CLASS TO-263D2/ TUBE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

IXTA150N15X4-7

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHULTRJNCTN X3CLASS TO-263D2/ TUBE

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA150N15X4-7

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max)	480 W
Rds On (Max) @ Id, Vgs	6.9 mOhm
Supplier Device Package	TO-263-7 (IXTA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IXTA150N15X4-7 Series

DiscMSFT NChUltrJnctn X3Class TO-263D2

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id
Littelfuse/Commercial Vehicle Products IXTA150N15X4-7	105 nC	TO-263-7 (IXTA)	20 V	150 A	5500 pF	D2PAK TO-263-7	150 V	Surface Mount	-55 °C	175 ░C	N-Channel	6.9 mOhm	10 V	MOSFET (Metal Oxide)	480 W	4.5 V
Littelfuse/Commercial Vehicle Products IXTA150N15X4	105 nC	TO-263AA	20 V	150 A	5500 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 V	Surface Mount	-55 °C	175 ░C	N-Channel	6.9 mOhm	10 V	MOSFET (Metal Oxide)	480 W	4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 7.82
Newark	Each	250	$ 8.82
		500	$ 8.20

Description

General part information

IXTA150N15X4-7 Series

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.

Documents

Technical documentation and resources