IXTA150N15X4-7 Series

DiscMSFT NChUltrJnctn X3Class TO-263D2

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT NChUltrJnctn X3Class TO-263D2

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id
Littelfuse/Commercial Vehicle Products IXTA150N15X4-7	105 nC	TO-263-7 (IXTA)	20 V	150 A	5500 pF	D2PAK TO-263-7	150 V	Surface Mount	-55 °C	175 ░C	N-Channel	6.9 mOhm	10 V	MOSFET (Metal Oxide)	480 W	4.5 V
Littelfuse/Commercial Vehicle Products IXTA150N15X4	105 nC	TO-263AA	20 V	150 A	5500 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 V	Surface Mount	-55 °C	175 ░C	N-Channel	6.9 mOhm	10 V	MOSFET (Metal Oxide)	480 W	4.5 V

Catalog

DiscMSFT NChUltrJnctn X3Class TO-263D2

Key Features

• Low on-resistance RDS(ON)and gate charge Qg

• dv/dt ruggedness

• Avalanche capability

• International standard packages

Description

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.