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PowerPAK 1212-8S
Discrete Semiconductor Products

SISS22DN-T1-GE3

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PowerPAK 1212-8S
Discrete Semiconductor Products

SISS22DN-T1-GE3

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSISS22DN-T1-GE3
Current - Continuous Drain (Id) @ 25°C90.6 A
Current - Continuous Drain (Id) @ 25°C25 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]44 nC
Input Capacitance (Ciss) (Max) @ Vds1870 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® 1212-8S
Power Dissipation (Max)5 W, 65.7 W
Rds On (Max) @ Id, Vgs [Max]4 mOhm
Supplier Device PackagePowerPAK® 1212-8S
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.49
10$ 1.24
100$ 0.98
500$ 0.83
1000$ 0.71
Digi-Reel® 1$ 1.49
10$ 1.24
100$ 0.98
500$ 0.83
1000$ 0.71
Tape & Reel (TR) 3000$ 0.67
6000$ 0.65
9000$ 0.63

Description

General part information

SISS22 Series

N-Channel 60 V 25A (Ta), 90.6A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

Documents

Technical documentation and resources