SISS22 Series

Catalog

MOSFET N-CH 60V 25.5A/92.5A PPAK

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Vishay General Semiconductor - Diodes Division SISS22LDN-T1-GE3	60 V	PowerPAK® 1212-8S	56 nC	3.65 mOhm	2540 pF	MOSFET (Metal Oxide)	5 W 65.7 W	Surface Mount	-55 °C	150 °C	2.5 V	20 V	PowerPAK® 1212-8S	4.5 V 10 V	25.5 A 92.5 A	N-Channel
Vishay General Semiconductor - Diodes Division SISS22DN-T1-GE3	60 V	PowerPAK® 1212-8S			1870 pF	MOSFET (Metal Oxide)	5 W 65.7 W	Surface Mount	-55 °C	150 °C	3.6 V	20 V	PowerPAK® 1212-8S		25 A	N-Channel	90.6 A	44 nC	4 mOhm	10 V	7.5 V