IXTA76P10T
ActiveDISCMSFT PCHAN-TRENCH GATE TO-263D2
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IXTA76P10T
ActiveDISCMSFT PCHAN-TRENCH GATE TO-263D2
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXTA76P10T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 76 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 197 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 13700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 298 W |
| Rds On (Max) @ Id, Vgs | 25 mOhm |
| Supplier Device Package | TO-263AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 15 V |
| Vgs(th) (Max) @ Id | 4 V |
IXTA76P10T Series
DiscMSFT PChan-Trench Gate TO-263D2
| Part | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | FET Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Power Dissipation (Max) [Max] | Mounting Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Littelfuse/Commercial Vehicle Products | 15 V | -55 °C | 150 °C | 197 nC | 100 V | P-Channel | 25 mOhm | 76 A | 4 V | 13700 pF | TO-263 (D2PAK) | 298 W | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | MOSFET (Metal Oxide) |
Littelfuse/Commercial Vehicle Products | 15 V | -55 °C | 150 °C | 197 nC | 100 V | P-Channel | 25 mOhm | 76 A | 4 V | 13700 pF | TO-263AA | 298 W | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | MOSFET (Metal Oxide) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 6.26 | |
| 50 | $ 5.00 | |||
| 100 | $ 4.47 | |||
| 500 | $ 3.95 | |||
| 1000 | $ 3.55 | |||
| 2000 | $ 3.33 | |||
Description
General part information
IXTA76P10T Series
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching
Documents
Technical documentation and resources