Discrete Semiconductor Products

IXTA76P10T-TRL

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Littelfuse/Commercial Vehicle Products

MOSFET P-CH 100V 76A TO263

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Discrete Semiconductor Products

IXTA76P10T-TRL

Active

Littelfuse/Commercial Vehicle Products

MOSFET P-CH 100V 76A TO263

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA76P10T-TRL

Current - Continuous Drain (Id) @ 25°C	76 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	197 nC
Input Capacitance (Ciss) (Max) @ Vds	13700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	298 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4 V

IXTA76P10T Series

DiscMSFT PChan-Trench Gate TO-263D2

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max) [Max]	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology
Littelfuse/Commercial Vehicle Products IXTA76P10T-TRL	15 V	-55 °C	150 °C	197 nC	100 V	P-Channel	25 mOhm	76 A	4 V	13700 pF	TO-263 (D2PAK)	298 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	MOSFET (Metal Oxide)
Littelfuse/Commercial Vehicle Products IXTA76P10T	15 V	-55 °C	150 °C	197 nC	100 V	P-Channel	25 mOhm	76 A	4 V	13700 pF	TO-263AA	298 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 6.26
		10	$ 5.37
		100	$ 4.47
	Digi-Reel®	1	$ 6.26
		10	$ 5.37
		100	$ 4.47
	Tape & Reel (TR)	800	$ 3.95
		1600	$ 3.55
		2400	$ 3.33
Newark	Each (Supplied on Full Reel)	1	$ 4.30
		2000	$ 4.09
		4000	$ 3.81
		8000	$ 3.55
		12000	$ 3.42
		20000	$ 3.37

Description

General part information

IXTA76P10T Series

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching

Documents

Technical documentation and resources