Discrete Semiconductor Products
2N5011S
ActiveMicrochip Technology
NPN SILICON SWITCHING 400V TO 760V, 0.2A
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Search across all available documentation for this part.
Documents2N5010-2N5015
Discrete Semiconductor Products
2N5011S
ActiveMicrochip Technology
NPN SILICON SWITCHING 400V TO 760V, 0.2A
Deep-Dive with AI
Documents2N5010-2N5015
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5011S |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 200 mA |
| Current - Collector Cutoff (Max) [Max] | 0.01 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 hFE |
| Mounting Type | Through Hole |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 1 W |
| Supplier Device Package | TO-39 (TO-205AD) |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 18.98 | |
| Microchip Direct | N/A | 1 | $ 20.44 | |
| Newark | Each | 100 | $ 18.98 | |
| 500 | $ 18.25 | |||
Description
General part information
2N5011S-Transistor Series
This specification covers the performance requirements for NPN, silicon, 2N5010 through 2N5015 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/727.
Documents
Technical documentation and resources