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TO-264-3, TO-264AA
Discrete Semiconductor Products

2SA1943RTU

Active
ON Semiconductor

PNP EPITAXIAL SILICON TRANSISTOR

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TO-264-3, TO-264AA
Discrete Semiconductor Products

2SA1943RTU

Active
ON Semiconductor

PNP EPITAXIAL SILICON TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2SA1943RTU
Current - Collector (Ic) (Max) [Max]17 A
Current - Collector Cutoff (Max) [Max]5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]55
Frequency - Transition30 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-50 °C
Package / CaseTO-264AA, TO-264-3
Power - Max [Max]150 W
Supplier Device PackageHPM F2
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic3 V
Voltage - Collector Emitter Breakdown (Max)250 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 109$ 2.77

Description

General part information

2SA1943 Series

PNP Epitaxial Silicon Transistor

Documents

Technical documentation and resources