Discrete Semiconductor Products
ZXMN2A04DN8TA
ActiveDiodes Inc
20V 5.9A 1.25W 35MΩ@2.5V,5A 700MV 2 N-CHANNEL SO-8 MOSFETS ROHS
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
ZXMN2A04DN8TA
ActiveDiodes Inc
20V 5.9A 1.25W 35MΩ@2.5V,5A 700MV 2 N-CHANNEL SO-8 MOSFETS ROHS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXMN2A04DN8TA |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 5.9 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1880 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 1.8 W |
| Rds On (Max) @ Id, Vgs | 25 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 700 mV |
ZXMN2A04DN8 Series
N-Channel MOSFET
| Part | Vgs (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Package / Case | FET Type | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Power - Max [Max] | Configuration | FET Feature | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 12 V | 1.1 W | 837 pF | MOSFET (Metal Oxide) | 20 V | 2.5 V 4.5 V | 700 mV | SOT-23-6 | N-Channel | 55 mOhm | SOT-23-6 | -55 °C | 150 °C | 3.7 A | Surface Mount | |||||||||
Diodes Inc | 1880 pF | MOSFET (Metal Oxide) | 20 V | 700 mV | 8-SOIC | 8-SO | -55 °C | 150 °C | 5.9 A | Surface Mount | 1.8 W | 2 N-Channel (Dual) | Logic Level Gate | 3.9 mm | 0.154 in | 25 mOhm | 22.1 nC | |||||||
Diodes Inc | 1880 pF | MOSFET (Metal Oxide) | 20 V | 700 mV | 8-SOIC | 8-SO | -55 °C | 150 °C | 5.9 A | Surface Mount | 1.8 W | 2 N-Channel (Dual) | Logic Level Gate | 3.9 mm | 0.154 in | 25 mOhm | 22.1 nC | |||||||
 Diodes Inc | 12 V | 1 W | 544 pF | MOSFET (Metal Oxide) | 20 V | 2.5 V 4.5 V | 700 mV | SC-59 SOT-23-3 TO-236-3 | N-Channel | SOT-23-3 | -55 °C | 150 °C | 3.4 A | Surface Mount | 60 mOhm | 6.6 nC | ||||||||
 Diodes Inc | 12 V | 1.56 W | 1900 pF | MOSFET (Metal Oxide) | 20 V | 2.5 V 4.5 V | 700 mV | 8-SOIC | N-Channel | 20 mOhm | 8-SO | -55 °C | 150 °C | 8.3 A | Surface Mount | 3.9 mm | 0.154 in | 18.9 nC | ||||||
Diodes Inc | 12 V | 303 pF | MOSFET (Metal Oxide) | 20 V | 2.5 V 4.5 V | 700 mV | SC-59 SOT-23-3 TO-236-3 | N-Channel | 120 mOhm | SOT-23-3 | -55 °C | 150 °C | 1.9 A | Surface Mount | 3 nC | 625 mW |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
ZXMN2A04DN8 Series
TN1.pdf
Documents
Technical documentation and resources