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Discrete Semiconductor Products

ZXMN2A02N8TA

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Diodes Inc

MOSFET N-CH 20V 8.3A 8SO

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Package Image for SO-8
Discrete Semiconductor Products

ZXMN2A02N8TA

Active
Diodes Inc

MOSFET N-CH 20V 8.3A 8SO

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationZXMN2A02N8TA
Current - Continuous Drain (Id) @ 25°C8.3 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18.9 nC
Input Capacitance (Ciss) (Max) @ Vds1900 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)1.56 W
Rds On (Max) @ Id, Vgs [Max]20 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id700 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.44
10$ 1.18
100$ 0.91
Digi-Reel® 1$ 1.44
10$ 1.18
100$ 0.91

Description

General part information

ZXMN2A04DN8 Series

TN1.pdf