Specification	FDC602P

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	1456 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

FDC602P Series

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ

Part	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDC602P_F095	1.5 V	Surface Mount	5.5 A	P-Channel	1456 pF	20 V	35 mOhm	SuperSOT™-6	12 V	20 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	2.5 V 4.5 V
ON Semiconductor FDC602P	1.5 V	Surface Mount	5.5 A	P-Channel	1456 pF	20 V	35 mOhm	SuperSOT™-6	12 V	20 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	2.5 V 4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.61
		10	$ 0.53
		100	$ 0.36
		500	$ 0.30
		1000	$ 0.26
	Digi-Reel®	1	$ 0.61
		10	$ 0.53
		100	$ 0.36
		500	$ 0.30
		1000	$ 0.26
	Tape & Reel (TR)	3000	$ 0.23
		6000	$ 0.22
		9000	$ 0.20
		30000	$ 0.20
ON Semiconductor	N/A	1	$ 0.21

Description

General part information

FDC602P Series

This P-Channel 2.5V specified MOSFET uses a rugged gate version of an advanced PowerTrench®process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).