FDC602P Series

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ

Catalog

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ

Part	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDC602P_F095	1.5 V	Surface Mount	5.5 A	P-Channel	1456 pF	20 V	35 mOhm	SuperSOT™-6	12 V	20 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	2.5 V 4.5 V
ON Semiconductor FDC602P	1.5 V	Surface Mount	5.5 A	P-Channel	1456 pF	20 V	35 mOhm	SuperSOT™-6	12 V	20 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	2.5 V 4.5 V

Catalog

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ

Key Features

-5.5 A, -20 V

• RDS(on)= 35 mΩ @ VGS= - 4.5V

• RDS(on)= 50 mΩ @ VGS= - 2.5V

• Fast switching speed

• High performance trench technology for extremelylow RDS(ON)

Description

This P-Channel 2.5V specified MOSFET uses a rugged gate version of an advanced PowerTrench®process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).