FDN5630
ActivePOWER MOSFET, N CHANNEL, 60 V, 1.7 A, 100 MILLIOHMS, SOT-23, 3 PINS, SURFACE MOUNT
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FDN5630
ActivePOWER MOSFET, N CHANNEL, 60 V, 1.7 A, 100 MILLIOHMS, SOT-23, 3 PINS, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDN5630 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.7 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 10 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) [Max] | 500 mW |
| Rds On (Max) @ Id, Vgs | 100 mOhm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.58 | |
| 10 | $ 0.36 | |||
| 100 | $ 0.23 | |||
| 500 | $ 0.17 | |||
| 1000 | $ 0.15 | |||
| Digi-Reel® | 1 | $ 0.58 | ||
| 10 | $ 0.36 | |||
| 100 | $ 0.23 | |||
| 500 | $ 0.17 | |||
| 1000 | $ 0.15 | |||
| Tape & Reel (TR) | 3000 | $ 0.13 | ||
| 6000 | $ 0.12 | |||
| 9000 | $ 0.11 | |||
| 15000 | $ 0.11 | |||
| 21000 | $ 0.10 | |||
| 30000 | $ 0.10 | |||
| 75000 | $ 0.10 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.15 | |
| 6000 | $ 0.13 | |||
| 12000 | $ 0.12 | |||
| 18000 | $ 0.11 | |||
| 30000 | $ 0.10 | |||
| ON Semiconductor | N/A | 1 | $ 0.10 | |
Description
General part information
FDN5630 Series
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON)in a small SOT23 footprint. ON Semiconductor’s PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON)specifications. The result is higher overall efficiency with less board space.