Discrete Semiconductor Products

FDB5800

Active

ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 80 A, 60 V, 0.0046 OHM, 10 V, 1 V ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsProduct Change Notice EN Datasheet +1

Discrete Semiconductor Products

FDB5800

Active

ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 80 A, 60 V, 0.0046 OHM, 10 V, 1 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDB5800

Current - Continuous Drain (Id) @ 25°C	80 A, 14 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	135 nC
Input Capacitance (Ciss) (Max) @ Vds	6625 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	242 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

FDB5800 Series

N-Channel PowerTrench<sup>®</sup> MOSFET, Logic Level, 60V, 80A, 6mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)
ON Semiconductor FDB5800_F085	14 A 80 A	242 W	2.5 V	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	6625 pF	Surface Mount	6 mOhm	N-Channel	4.5 V 10 V	20 V	135 nC	MOSFET (Metal Oxide)	60 V
ON Semiconductor FDB5800	14 A 80 A	242 W	2.5 V	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	6625 pF	Surface Mount	6 mOhm	N-Channel	4.5 V 10 V	20 V	135 nC	MOSFET (Metal Oxide)	60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.93
		10	$ 2.58
		100	$ 1.82
	Digi-Reel®	1	$ 3.93
		10	$ 2.58
		100	$ 1.82
	Tape & Reel (TR)	800	$ 1.41
		1600	$ 1.37
Newark	Each	1	$ 4.77
		10	$ 3.44
		25	$ 3.18
		50	$ 2.93
		100	$ 2.67
ON Semiconductor	N/A	1	$ 1.46

Description

General part information

FDB5800 Series

N-Channel Logic Level PowerTrench®MOSFET 60V, 80A, 6mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Package Drawing-418AJ-D2PAK-3 (TO-263, 3-LEAD)

Package Drawing