FDB5800 Series

N-Channel PowerTrench® MOSFET, Logic Level, 60V, 80A, 6mΩ

Catalog

N-Channel PowerTrench® MOSFET, Logic Level, 60V, 80A, 6mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)
ON Semiconductor FDB5800_F085	14 A 80 A	242 W	2.5 V	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	6625 pF	Surface Mount	6 mOhm	N-Channel	4.5 V 10 V	20 V	135 nC	MOSFET (Metal Oxide)	60 V
ON Semiconductor FDB5800	14 A 80 A	242 W	2.5 V	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	6625 pF	Surface Mount	6 mOhm	N-Channel	4.5 V 10 V	20 V	135 nC	MOSFET (Metal Oxide)	60 V

Catalog

N-Channel PowerTrench® MOSFET, Logic Level, 60V, 80A, 6mΩ

Key Features

• RDS(on)= 4.6mΩ (Typ.) @ VGS= 10V, ID= 80A

• High performance trench technology for extermly low RDS(on)

• Low Gate Charge

• High power and current handling capability

• Qualified to AEC Q101

• RoHS Compliant

Description

N-Channel Logic Level PowerTrench®MOSFET 60V, 80A, 6mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.