Specification	FQPF10N20C

Current - Continuous Drain (Id) @ 25°C	9.5 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	510 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQPF10N20C Series

Power MOSFET, N-Channel, QFET®, 200 V, 9.5 A, 360 mΩ, TO-220F

Part	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQPF10N20C	MOSFET (Metal Oxide)	TO-220-3 Full Pack	10 V	510 pF	4 V	-55 °C	150 °C	N-Channel	30 V	200 V	9.5 A	360 mOhm	Through Hole	38 W	TO-220F-3	26 nC
ON Semiconductor FQPF10N60C	MOSFET (Metal Oxide)	TO-220-3 Full Pack	10 V	2040 pF	4 V	-55 °C	150 °C	N-Channel	30 V	600 V	9.5 A	730 mOhm	Through Hole		TO-220F-3		50 W	57 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.83
		10	$ 1.17
		100	$ 0.78
		500	$ 0.62

Description

General part information

FQPF10N20C Series

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.