FQPF10N20C Series
Power MOSFET, N-Channel, QFET<sup>®</sup>, 200 V, 9.5 A, 360 mΩ, TO-220F
Manufacturer: ON Semiconductor
Catalog
Power MOSFET, N-Channel, QFET<sup>®</sup>, 200 V, 9.5 A, 360 mΩ, TO-220F
| Part | Technology | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Mounting Type | Power Dissipation (Max) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 10 V | 510 pF | 4 V | -55 °C | 150 °C | N-Channel | 30 V | 200 V | 9.5 A | 360 mOhm | Through Hole | 38 W | TO-220F-3 | 26 nC | ||
 ON Semiconductor | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 10 V | 2040 pF | 4 V | -55 °C | 150 °C | N-Channel | 30 V | 600 V | 9.5 A | 730 mOhm | Through Hole | TO-220F-3 | 50 W | 57 nC |
Key Features
• 9.5 A, 600 V, RDS(on)= 730 mΩ (Max.) @ VGS= 10 V, ID= 4.75 A
• Low Gate Charge (Typ. 44 nC)
• Low Crss (Typ. 18 pF)
• 100% Avalanche Tested
Description
AI
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.