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TO-252AA
Discrete Semiconductor Products

FDD5353

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 50 A, 60 V, 0.0101 OHM, 10 V, 1.8 V ROHS COMPLIANT: YES

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TO-252AA
Discrete Semiconductor Products

FDD5353

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 50 A, 60 V, 0.0101 OHM, 10 V, 1.8 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD5353
Current - Continuous Drain (Id) @ 25°C11.5 A, 50 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]65 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3215 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)69 W, 3.1 W
Rds On (Max) @ Id, Vgs12.3 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.12
10$ 1.35
100$ 0.92
500$ 0.73
1000$ 0.67
Digi-Reel® 1$ 2.12
10$ 1.35
100$ 0.92
500$ 0.73
1000$ 0.67
Tape & Reel (TR) 2500$ 0.61
5000$ 0.59
NewarkEach 1$ 2.51
10$ 1.75
100$ 1.28
500$ 1.10
1000$ 1.05
2500$ 0.98
10000$ 0.96
ON SemiconductorN/A 1$ 0.63

Description

General part information

FDD5353 Series

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.