FDD5353 Series

N-Channel Power Trench® MOSFET, 60V, 50A, 12.3mΩ

Catalog

N-Channel Power Trench® MOSFET, 60V, 50A, 12.3mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
ON Semiconductor FDD5353	-55 °C	150 °C	TO-252AA	3.1 W 69 W	4.5 V 10 V	12.3 mOhm	3 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	65 nC	N-Channel	Surface Mount	3215 pF	20 V	11.5 A 50 A	60 V

Catalog

N-Channel Power Trench® MOSFET, 60V, 50A, 12.3mΩ

Key Features

• Max rDS(on)= 12.3mΩ at VGS= 10V, ID= 10.7A

• Max rDS(on)= 15.4mΩat VGS= 4.5V, ID= 9.5A

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.