Specification	NXH350N100H4Q2F2SG

Configuration	Three Level Inverter
Current - Collector (Ic) (Max) [Max]	303 A
Current - Collector Cutoff (Max) [Max]	1 mA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	24.146 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	592 W
Supplier Device Package	42-PIM/Q2PACK (93x47)
Vce(on) (Max) @ Vge, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1000 V

NXH350N100H4Q2 Series

SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Input	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case	Power - Max [Max]	Input Capacitance (Cies) @ Vce	IGBT Type	Supplier Device Package	Configuration	Vce(on) (Max) @ Vge, Ic	NTC Thermistor
ON Semiconductor NXH350N100H4Q2F2SG	Chassis Mount	303 A	1000 V	Standard	150 °C	-40 °C	1 mA	Module	592 W	24.146 nF	Trench Field Stop	42-PIM/Q2PACK (93x47)	Three Level Inverter	1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NXH350N100H4Q2 Series

The NXH350N100H4Q2 is a power integrated module (PIM) containing a single I-type NPC stage containing 100 A, 1200 V SiC diodes for the neutral point clamps, 350 A, 1000 V IGBTs for the outer IGBTs and 300 A, 1000 V IGBTs for the inner IGBTs. The inverse diodes for the IGBTs are specified at 170 A for switching. An on-board thermistor is included.