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SQ-MELF
Discrete Semiconductor Products

JAN1N5809US/TR

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Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 100V, 6A, 30NS B-MELF BAG T/R

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SQ-MELF
Discrete Semiconductor Products

JAN1N5809US/TR

Active
Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 100V, 6A, 30NS B-MELF BAG T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN1N5809US/TR
Capacitance @ Vr, F60 pF
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr5 µA
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseSQ-MELF, B
QualificationMIL-PRF-19500/477
Reverse Recovery Time (trr)30 ns
Speed200 mA, 500 ns
Supplier Device PackageSQ-MELF, B
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 7.33
Microchip DirectN/A 1$ 7.90

Description

General part information

JAN1N5809US-TR-Rectifier Series

This "Ultrafast Recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass construction using an internal "Category 1" metallurgical bond. These devices are available in both surface mount MELF and leaded package configurations. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.