STL325N4LF8AG
ActiveAUTOMOTIVE N-CHANNEL ENHANCEMENT MODE LOGIC LEVEL 40 V, 0.75 MOHM MAX., 373 A STRIPFET F8 POWER MOSFET IN A POWERFLAT 5X6
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STL325N4LF8AG
ActiveAUTOMOTIVE N-CHANNEL ENHANCEMENT MODE LOGIC LEVEL 40 V, 0.75 MOHM MAX., 373 A STRIPFET F8 POWER MOSFET IN A POWERFLAT 5X6
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Technical Specifications
Parameters and characteristics for this part
| Specification | STL325N4LF8AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 373 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 7657 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 188 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 0.75 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL325N4LF8AG Series
This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.
It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources